Industrial Consultancy & Sponsored Research (IC&SR) , IIT Madras
Hybrid Power Filtering Unit Incorporating Low Power, Fast Switching Converter in Conjunction with High Power, Slow Switching Converter
Categories for this Invention
Category – Power Electronics, Electronics & Circuits
Applications – Industrial Power Systems, Renewable Energy Systems, Electric Vehicle Charging Stations, HVAC Systems
Industry – Energy & Utilities
Market – HVAC market size was worth over USD 294 billion in 2023 and is estimated to expand at 5.6% CAGR from 2024 to 2032
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Problem Statement
- Converters and inverters cause harmonic distortion in AC power supplies, leading to equipment overheating and power failures.
- Si IGBT-based converters are limited by their switching frequency, making them inefficient for higher-order harmonic mitigation.
- There is a need for a hybrid power filtering unit that combines low-power, fast-switching SiC MOSFET converters with high-power, slow-switching Si IGBT converters to improve harmonic rejection and compactness.
Technology
Hybrid Filter Design:
- Combines a high-capacity Si IGBT converter for lower-order harmonics (5th and 7th) with a smaller, fast-switching SiC MOSFET converter for higher-order harmonics (11th, 13th).
Efficiency and Loss Management:
- The Si IGBT converter operates at a low switching frequency, reducing switching losses, while the SiC MOSFET converter operates at a high frequency for efficient higher-order harmonic elimination.
Parallel Configuration:
- The SiC MOSFET converter is retrofitted in parallel with the Si IGBT converter, optimizing harmonic filtering across different frequency ranges.
Key Features / Value Proposition
1.Comprehensive Harmonic Mitigation:
- Effectively eliminates both lower-order (5th, 7th) and higher-order (11th, 13th) harmonics through a dual-converter approach.
2. Optimized Efficiency:
- Utilizes a high-capacity Si IGBT converter for lower-order harmonics to minimize switching losses while achieving high efficiency.
3. Advanced High-Frequency Filtering:
- Incorporates a small, fast-switching SiC MOSFET converter to handle high-frequency harmonic components, enhancing overall performance.
4. Cost-Effective Solution:
- Balances the use of cost-effective Si IGBT technology with the advanced capabilities of SiC MOSFETs, offering a high-performance yet economical solution.
5. Parallel Configuration Benefits:
- The parallel setup of converters maximizes harmonic rejection across various frequency ranges, ensuring a cleaner power supply.
6. Scalable and Retro-Fittable:
- Designed to be easily retrofitted into existing systems, allowing for seamless integration and scalability based on power requirements.
Questions about this Technology?
Contact For Licensing
sm-marketing@imail.iitm.ac.in
ipoffice2@iitm.ac.in
Research Lab
Prof. Kamalesh Hatua
Department of Electrical Engineering
Intellectual Property
- IITM IDF Ref. 1804
- IN 504454 – Patent Granted
Technology Readiness Level
TRL – 5
Technology validated in relevant environment.