Industrial Consultancy & Sponsored Research (IC&SR) , IIT Madras
Technology Category/ Market
Technology: Aluminum Nitride (AlN) Thin Film;
Industry:, CMOS silicon technology; MEMS Device Manufacturing Industry, Electronic Industry, Energy and Infrastructure Industry;
Application: MEMS Devices, Sensors, microelectronics and power-related applications
Market: The global Aluminum Nitride market is expected to grow at a CAGR of 2.93% for the forecast period of 2021 to 2028.
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Problem Statement
- Generally, the physical properties of sputter deposited Aluminum nitride (AlN) film depends on the crystallographic orientation, which is dependent on the sputtering process parameters, and by optimizing these parameters, the microstructure and growth axis (c-axis, a-axis or m-plane) of the AlN film can be controlled.
- To fabricate AlN thin film based high frequency devices, it is required to grow highly oriented AlN thin films on metal electrodes.
- However, due to lattice mismatch and difference between the coefficients of thermal expansion, it is very difficult to grow oriented AlN thin films on metal electrodes.
- Hence, based on the foregoing need. there is a requirement to address the above issues in efficient manner.
Technology
- Present invention describes an improved a-axis AlN thin film disposed Mo coated Si substrate for use in fabrication of MEMS devices in a wide range of industrial applications.
- More specifically said invention is using reactive RF magnetron sputtering technique.
- The featured of the claimed method comprises a few steps shown in smart chart:
- RF power of 250W and substrate temperature of 350°C maintained for forming highly a-axis oriented AlN thin films on highly oriented Mo coated Si substrate.
Key Features/ Value Proposition
Technical Perspective:
- The method as claimed that at lower target to substrate distance (5 to 7cm) and higher N2 concentration (50% to 60%), highly oriented AlN is formed.
Industrial Perspective:
- Patent technology is having high demand on fabrication of MEMS devices, in energy harvester and resonator applications over lead zirconate titanate (PZT) and ZnO because it is compatible with standard CMOS silicon technology.
- Claimed technology is cost effective and able to get the desired properties of AlN film on Mo coated Si substrate.
Questions about this Technology?
Contact for Licensing
sm-marketing@imail.iitm.ac.in
ipoffice2@iitm.ac.in
Research Lab
Prof. RAMACHANDRA RAO M S
Department of Physics
Prof. AMITAVA DAS GUPTA
Prof. DELEEP R NAIR
Department of Electrical Engineering
Intellectual Property
- IITM IDF Ref.: 2004
- IN Patent No. 425409 (Granted)
Technology Readiness Level
TRL- 3
Proof of Concept Ready Stage