Industrial Consultancy & Sponsored Research (IC&SR) , IIT Madras
Method to Synthesize a Rhombohedral (R) Phase Transition Metal Dichalcogenide (Tmd) and its Implementations thereof
Categories for this Invention
Category – Advanced materials
Applications –Chemicals, Electronics, optoelectronic, and nonlinear photonic devices
Industry – Chemical/ Electrical
Market -The global advanced materials market size was estimated at USD 61.35 billion in 2022 and it is expected to hit around USD 112.7 billion by 2032, poised to grow at a CAGR of 6.27% from 2023 to 2032.
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Problem Statement
- In recent years, the global interest in two-dimensional (2D) materials, specifically Transitional Metal Dichalcogenides (TMDCs), Molybdenum disulfide (MoS2) has been extensively studied due to their unique properties
- Existing synthesis methods, predominantly focus on the gaseous precursors, leading to the growth of H-phase MoS2, with limited ability to selectively grow R-phase material.
Technology
Discloses a method to synthesize a rhombohedral (R) phase transition metal dichalcogenide (TMD)
- Placing a chalcogenide precursor in a first zone of a reaction chamber, and a transition metal oxide precursor and a substrate in a second zone of the reaction chamber.
- Heating the first zone and second zone of the reaction chamber( 810°C to 830°C) and supply carrier gas to first zone and second zone
- Providing a pulsed supply of the carrier gas to the first zone and the second zone(Flow rate – 0 to 100sccm; Time interval -0 to 5 minutes
- Cooling the first zone and second zone of the reaction chamber
- Chalcogenide precursor is selected from the group consisting of sulphur, selenium, and tellurium.
- The substrate is selected from silicon/silicon dioxide (SiO2/ Si) substrate and carrier gas is argon.
- Heating in the first zone is done at a temperature in the range of 200°C to 250°C.
- Pulsed supply of the carrier gas allows feeding of more chalcogenide precursor from the first zone to the second zone.
Key Features / Value Proposition
Technical Perspective:
- Formation of Rhombohedral (R) phase transition metal dichalcogenide (TMD) has a width in the range of 2-3 µm, and thickness in the range of 4-6 nm.
- Provides a method to synthesize a rhombohedral (R) phase transition metal dichalcogenide where R-phase MoS2 has sword like geometry.
User Perspective:
Unlike in conventional methods using gas precursors, the present invention uses two solid precursors, i.e., chalcogenide precursor and a transition metal oxide precursor, that allows better controllability of the gas phase reaction.
Large-area growth of R-phase1(0 to 120 μm) TMDCs, efficient for developing high-performance electronic, optoelectronic, and nonlinear photonic devices
Devoid of any etching process as the synthesized R-phase TMDCs has a well-defined geometry.
Questions about this Technology?
Contact For Licensing
sm-marketing@imail.iitm.ac.in
ipoffice2@iitm.ac.in
Research Lab
Prof. PRAMODA KUMAR NAYAK
Prof. ABHISHEK MISRA
Department of Physics
Intellectual Property
- IITM IDF Ref. 2398
- IN436898- Granted
Technology Readiness Level
TRL-4
Technology Validated in the Lab