The present invention discloses a method involves the fabrication of high-quality large-scale PbZrxTi1-xO3(PZT) thin films on a platinum-coated silicon substrate.

Composition and Preparation:

• PZT thin films are prepared from stoichiometric quantities of the oxide powders PbO, ZrO2, and TiO2 through a solid-state reaction route

Raster Mechanism:

• A programmable raster mirror is utilized and positioned above the quartz window for precision and deposition

Laser Beam Scanning:

• The programmable rastered laser beam is fixed with a scan rate of 300 steps/sec

Scanning Pattern:

• starts from the edge of the target, moves towards the center of the 2-inch rotating PZT target, and then reverses its direction.

Incidence Angle:

• The laser beam is directed onto the target with a specific incidence  angle of 45 degrees.

Chamber Conditions and Annealing:

• Partial pressure of 0.3 mbar of oxygen (O2) is maintained inside the chamber, followed by deposition, and 60-minute post-deposition annealing to form PZT thin films
• In the said method the mirror is rastered across the large diameter of the ablated target, contributing to the precision of the deposition process.
• The said programmable rastered laser beam sweeps across the rotating target, covering the entire 2-inch target surface area.
• Further, the crystalline large-area PZT thin films acquired by the said method, wherein the cooling rate during annealing is set at 10 degrees Celsius per minute
• The lateral homogeneity over the large area has been demonstrated by recording polarization maps at the different locations with different electrode sizes of the polycrystalline films