Industrial Consultancy & Sponsored Research (IC&SR) , IIT Madras
A Hermetically Sealed Device & Method to Realize Phonon Antibunching
Technology Category/Market
Category – Phononics, Micro/Nanoelectromechanical system (MEMS/NEMS)
Applications – Quantum Ultrasonic sensing, Quantum Computing
Market – The global quantum computing market is poised to grow at a CAGR of 36.89% from 2022 – 2030 and it is expected to reach around USD 125 billion by 2030.
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Problem Statement
- Phononics is a branch of science which is the study and application of mechanical/elastic wave phenomena.. Due to its longer timescales and deeper penetration in various media, elastic waves are desirable for sensing and device applications.
- The lack of a true source of single phonons prevents the creation of such quantum devices. Antibunching must be enabled to find a true source of single phonons.
- Antibunching in phonons is similar to “Photon blockade” for photons and Coulomb blockade for electrons. Achieving antibunching by conventional means requires scaling down the device to nano scale.
- Since sound waves are greatly affected by surrounding heat, stringent requirement of temperature of a few mK (milli Kelvin) is required which cannot be achieved by standard equipment.
- There is, therefore, a need for a device and a method to efficiently achieve the antibunching.
Technology
DEVICE & METHOD: (refer Fig. 1&2)
It comprises of:
- A hermetically sealed enclosure contains a pair of resonators, one linear and one non-linear, that are Coulomb-coupled to accomplish phonon anti-bunching.
- A predetermined pre-tension value is applied to the pair of resonators, which are separated by a predefined separation value and driven by an alternating current source coupled to the linear resonator.
- Thereafter, the parameters such as quantity of charge, predefined pre-tension value, separation value, and driving frequency are needed to achieve phonon anti-bunching at near-kelvin temperatures or near-micron device dimensions.
- Thereafter, these parameters are tuned based on a model (Liouville-von Neumann master equation) and the suitable temperature for Phonon antibunching is observed to be 0.04To.
Key Features/Value Proposition
- The technique disclosed in the present disclosure is capable of achieving antibunching at near-kelvin temperatures or near micron dimensions.
- This technology is novel due to the gigahertz range in vacuum setting, as a source of antibunched single phonons.
- The pair of resonators are made of a material comprising at least one of diamond and graphene.
- The hermetically sealed casing has an ultra-high vacuum of the order of 10-5 – 10-10 Pascal.
- The present disclosure employing unconventional phonon blockade phenomenon implemented by a device to achieve phonon antibunching for larger and hotter systems.
Questions about this Technology?
Contact for Licensing
Research Lab
Prof. Prabhu Rajagopal
Department of Mechanical Engineering
Intellectual Property
- IITM IDF Ref. 2091
- IN 202041038660
Technology Readiness Level
TRL – 3
Proof of concept stage