Industrial Consultancy & Sponsored Research (IC&SR) , IIT Madras

A Signal Strength Indicator Circuit

Categories for this Invention

Technology: Signal Strength Indicator Circuit;

Industry/Application: Signal Strength detectors, signal-strength detector; CMOS inverter;

Market: The global market is projected to reach at a CAGR of 32.58% during the period (2024-32).

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Problem Statement

  • The problem statement discussed in the present invention is how to develop a topology where amplification and amplitude detection can be combined in a single block. .
  • Hence, subject invention addresses the issue efficiently.

Technology

  • Present patent discussed about a pseudo-differential amplifier chain.
  • Said pseudo-differential amplifier chain comprises a complementary metal oxide semiconductor (CMOS) inverter pair as amplifier, configured to receive a differential signal.
  • Further, it includes a voltage regulator unit connected to the pseudo-differential amplifier chain to provide a supply voltage Vs for biasing the pseudo-differential amplifier at a reference Direct current (DC) operating point.
  • Moreover, the pseudo-differential amplifier chain includes a current mirror circuit connected with the pseudo-differential amplifier chain to receive a supply current from the pseudo-differential amplifier chain & generate a mirrored output current.
  • The mirrored output current is used to determine strength of the differential signal.

Key Features / Value Proposition

  • Integrates amplification & amplitude detection in a single unit. CMOS inverters can be more easily designed at low supply voltages than other types of amplifiers.
  • Develops a signal-strength detector utilising low power.
  • The signal-strength detector circuit occupies 0.08 mm2, consumes 1.2 mW from 1.5V and
  • the noise floor is 0.2mV rms. (Refer Table1)
  • Facilitates a compact signal-strength detector.
  • More amenable to low supply voltage operation.
  • A 65nm prototype of the
  • signal-strength detector circuit has a 70.9dB dynamic range with ±1dB error.

Questions about this Technology?

Contact For Licensing

sm-marketing@imail.iitm.ac.in
ipoffice2@iitm.ac.in

Research Lab

Prof. Nagendra Krishnapura

Department of Electrical Engineering

Intellectual Property

  • IITM IDF Ref. 2529

  • Patent No. 545473  

Technology Readiness Level

TRL – 4

Technology validated in lab scale.

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