Method for Generating Different Phases of Copper Sulphide Nanostructures using Electrospray Deposition (ESD) under Ambient Conditions
Technology Category/Market
Category – Advance Material and Manufacturing
Applications –Drug delivery systems, batteries, semiconductors , photocatalysis, sensors,
Industry – Biomedical, Electrical
Market -The global nanomaterials market size was valued at USD 11.43 billion in 2022 and it is expected to hit USD 43.1 billion by 2030, registering growth at a CAGR of 18.05% from 2022 to 2030.
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Problem Statement
- Currently Chemical Vapor Deposition (CVD) is the most common synthetic method, extensively used for making high quality atomic layer thin films of copper sulphide for different applications, where high temperature processing is required for making such materials for electronic applications
- Hence, there is a long felt need for synthesising specific copper sulphide nanostructures under ambient conditions for practically viable applications
Technology
- The present invention discloses a method of generating different phases of copper sulphide nanostructures under ambient temperature using electrospray deposition (ESD). The said method comprising:
Key Features/Value Proposition
Technical Perspective:
- Generates different phases of copper sulphide nanostructures –Chalcocite (Cu2S) nanopyramids are formed by superionic diffusion of sulphur into copper, digenite(Cu1.8S) platelets are formed by slow ionic diffusion of sulphur ions through lattice vacancies in Cu2S nanopyramid
- Cu2S exhibits positive photocurrent response under electrochemical conditions
- Cu1.8S platelets exhibit sharp metallic conductance due to accumulation of free charge carriers
User Perspective:
- Efficient method to synthesize specific copper sulphide nanostructures under ambient conditions
- Does not require solvent and harsh synthetic condition.
Questions about this Technology?
Contact for Licensing
Research Lab
Prof. Pradeep. T
Department of Chemistry
Intellectual Property
- IITM IDF Ref. 1895
- IN 396273-Granted
Technology Readiness Level
TRL-3
 Experimental proof of concept
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