A Chromium Oxynitride Electrochemical Storage Device and a Chromium Oxynitride Nanoparticle Electrode
Categories for this Invention
Technology: A Chromium Oxynitride Nanoparticle electrode used in supercapacitor.
Category: Micro & Nano Technologies/ Chemistry & Chemical Analysis/ Electronics & Circuits.
Industry: Metallurgical/Chemical /Energy.
Application: Advanced Materials, Clean Energy
Market: The global market size of nanoparticles is estimated to grow from USD 5.1 billion in 2023 to USD 15.1 billion by 2035, representing a CAGR of 9.4% during the forecast period 2023-2035.
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Problem Statement
- Researchers are studying metallic nitrides, specifically chromium nitride and chromium oxynitride, due to their electrical, optical, mechanical, and tribological properties.
- These materials are used in anti-wear and corrosion films due to their high hardness and resistance.
- Chromium nitride is also used in electrochemical energy storage, particularly as a super capacitor.
- Super capacitors have high capacitance, making them faster to store electricity than batteries.
- They store charge through two main mechanisms: electrical double layer (EDL) capacitance and pseudo capacitance.
- Nano-structuring strategies are being explored to enhance electrochemical energy storage and catalytic applications.
Technology
A Chromium Oxynitride electrochemical storage device/ Chromium Oxynitride nanoparticle electrode consists of a
- Positive Electrode,
- Negative Electrode, and
- Separator, coated with chromium oxynitride nanoparticles on a charge substrate acting as a current collector.
- Separator comprises an anion exchange membrane.
The charge substrate is one of, selected from nickel foam, carbon paper, carbon cloth, stainless steel, glassy carbon, titanium foil and copper foil.
Key Features / Value Proposition
Device is used as a super capacitor with
- High cyclic stability
- 10000-15000 cycles
- Excellent capacitance retention
(95-99%.)
supercapacitor is fabricated structure
- coin cell supercapacitor of 17-20mm diameter.
- Maintains 92-98% of specific capacitance even at high current densities exceeding
2 A g-1. - Excellent charge storage capability.
It has a specific capacitance ranging from
- 140-150 Fg-1 at a scan rate 5 mV s-1 and
- 80-90 F g-1 at a scan rate 500 mV s-1.
- Generating a photocurrent of
30-40 mA cm-1 in 1M KOH medium Under light illumination of 300W Xenon lamp for a period of 3h. - Generating a current of
65-75 mA cm-2 at 5 mV s-1 when dispersed in a suitable medium.
Questions about this Technology?
Contact For Licensing
sm-marketing@imail.iitm.ac.in
ipoffice2@iitm.ac.in
Research Lab
Prof. Tiju Thomas
Department of Metallurgical and Materials Engineering
Intellectual Property
- IITM IDF Ref. 1948
- Patent No: IN 534594
Technology Readiness Level
TRL 4
Technology Validated in Lab